Precisely Controlled Anodic Etching for Processing of GaAs based Quantum Nanostructures and Devices

摘要

For controlled low-damage etching of AlGaAs/GaAs nanostructures, fundamental properties of an etching process consisting of anodic oxidation and subsequent oxide dissolution are investigated both theoretically and experimentally. Anodic oxides formed on GaAs (001) and (111)B surfaces have the same composition and the same anodization parameters according to XPS, SEM and AFM measurements. The same applies to those formed on Al0.3Ga0.7As (001) and (111)B surfaces. The etching depth can be precisely controlled in nanometer scale by the anodization voltage. Selective etching was realized, using the lithography patterns. The surface morphology is much better than that in the standard wet chemical etching.